Downloads
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High Power SPDT Reflective Switch For 1 GHz – 1.1 GHz Applications: CMSW-SPDTR-1G-5K Datasheet
1/17/2018
The CMSW-SPDTR-1G-5K is a single-pole double-throw (SPDT) hermetically sealed reflective switch designed for operation in applications from 1 GHz to 1.1 GHz at 100 W average input power. It features peak power handling at 5kW for a 17 uS/2% duty cycle pulse.
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High Power SPDT Reflective Switch For 1 GHz – 1.1 GHz Applications: CMSW-SPDTR-1G-5K
1/17/2018
The new CMSW-SPDTR-1G-5K from Corry Micronics is a single-pole double-throw (SPDT) hermetically sealed reflective switch designed for operation in applications from 1 GHz to 1.1 GHz at 100 W average input power. It features peak power handling at 5kW for a 17 uS/2% duty cycle pulse.
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High Power RF Amplifier For Communications Applications: UMTS 2110-2170-45 Datasheet
1/4/2018
The UMTS 2110-2170-45 is a high power RF amplifier designed for communications applications in the 2110 GHz to 2170 GHz frequency range. This amplifier offers a LTE signal type, 45 W of nominal power, and 44 dB of nominal gain.
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High Power RF Amplifier For Communications Applications: UMTS 935-960-45 Datasheet
1/4/2018
The UMTS 935-960-45 is a high power RF amplifier designed for communications applications in the 935 GHz to 960 GHz frequency range. This amplifier offers a LTE signal type, 45 W of nominal power, and 44 dB of nominal gain.
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High Power RF Amplifier For Communications Applications: LTE 1805-1880-45 Datasheet
1/4/2018
The LTE 1805-1880-45 is a high power RF amplifier designed for communications applications in the 1805 GHz to 1880 GHz frequency range. This amplifier offers a LTE signal type, 45 W of nominal power, and 51 dB of nominal gain.
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High Power RF Amplifier For Communications Applications: LTE 869-894-45 Datasheet
1/4/2018
The LTE 869-894-45 is a high power RF amplifier designed for communications applications in the 869 GHz to 894 GHz frequency range. This amplifier offers a LTE signal type, 45 W of nominal power, and 51 dB of nominal gain.
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High Power RF Amplifier For Communications Applications: GSM 1805-1880-32 Datasheet
1/4/2018
The GSM 1805-1880-32 is a high power RF amplifier designed for communications applications in the 1805 GHz to 1880 GHz frequency range. This amplifier offers a GSM signal type, 32 W of nominal power, and 33 dB of nominal gain.
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High Power RF Amplifier For Communications Applications: GSM 935-960-32 Datasheet
1/4/2018
The GSM 935-960-32 is a high power RF amplifier designed for communications applications in the 935 GHz to 960 GHz frequency range. This amplifier offers a GSM signal type, 32 W of nominal power, and 33 dB of nominal gain.
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High Power RF Amplifiers For Communications Applications
1/4/2018
Corry Micronics offers a series of high power RF amplifiers operating in frequencies ranging from 869 GHz to 2170 GHz, and with nominal output power of 32 W or 45 W. Signal types include GSM, LTE, and UMTS models. Control and monitoring features are available.
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4 Channel 100 Watt Attenuator: CMIATT-4CH-200W Datasheet
11/8/2017
The CMIATT-4CH-200W is a 4 Channel, 100 W attenuator. Features include a DC to 6 GHz frequency range, 50 dB attenuation with ±1.75 dB accuracy, 100 W maximum power handling per channel, and N-type female RF input and output connectors.